1 4 - ELM14440AA-N general description features maximum absolute ratings thermal characteristics pin configuration circuit parameter symbol typ. max. unit note maximum junction-to-ambient t10s rja 38 50 c /w 1 maximum junction-to-ambient steady-state 69 80 c /w maximum junction-to-lead steady-state rjl 24 30 c /w 3 parameter symbol limit unit note drain-source voltage vds 60 v gate-source voltage vgs 20 v continuous drain current ta=25c id 5 a 1 ta=70c 4 pulsed drain current idm 20 a 2 power dissipation ta=25c pd 2.5 w ta=70c 1.6 junction and storage temperature range tj, tstg -55 to 150 c sop-8(top view) pin no. pin name 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain 4 3 2 1 5 6 7 8 ELM14440AA-N uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=60v ? id=5a (vgs=10v) ? rds(on) < 55m (vgs=10v) ? rds(on) < 75m (vgs=4.5v) single n-channel mosfet s g d
2 electrical characteristics ta=25 c parameter symbol condition min. typ. max. unit static parameters drain-source breakdown voltage bvdss id=250a, vgs=0v 60 v zero gate voltage drain current idss vds=48v vgs= 0v 1 a tj=55c 5 gate-body leakage current igss vds=0v, vgs=20v 100 na gate threshold voltage vgs(th) vds=vgs, id=250 a 1.0 2.3 3.0 v on state drain current id(on) vgs=10v, vds=5v 20 a static drain-source on-resistance rds(on) vgs=10v id= 5a 42 55 m tj = 125c 75 vgs = 4.5v, id =4 a 54 75 m forward transconductance gfs vds = 5v, id =5 a 11 s diode forward voltage vsd is = 1a, vgs=0v 0.78 1.00 v max. body -diode continuous current is 4 a dynamic parameters input capacitance ciss vgs=0v, vds=30v, f=1mhz 450 540 pf output capacitance coss 60 pf reverse transfer capacitance crss 25 pf gate resistance rg vgs = 0v, vds = 0v, f = 1mhz 1.65 2.00 switching parameters total gate charge (10v) qg vgs=10v, vds=30v, id=5a 8.5 10.5 nc total gate charge (4.5v) qg 4.3 5.5 nc gate-source charge qgs 1.6 nc gate-drain charge qgd 2.2 nc turn - on delay time td(on) vgs=10v, vds=30v rl=6, rgen=3 5.1 7.0 ns turn - on rise time tr 2.6 4.0 ns turn - off delay time td(off) 15.9 20.0 ns turn - off fall time tf 2.0 3.0 ns body diode reverse recovery time trr if =5 a, dl/dt = 100a/s 25.1 35.0 ns body diode reverse recovery charge qrr if =5 a, dl/dt = 100a/s 28.7 nc single n-channel mosfet ELM14440AA-N 4 - note : 1. 2. 3. 4. 5. the value of rja is measured with the device mounted on 1in2 fr-4 board of 2oz. copper, in still air environment with ta=25 c . the value in any given applications depends on the users speci?c board design, the current rating is based on the t 10s themal resistance rating. repetitive rating, pulse width limited by junction temperature. the rja is the sum of the thermal impedance from junction to lead rjl and lead to ambient. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5%max. these tests are performed with the device mounted on 1in2 fr-4 board with 2oz. copper, in a still air environment with ta=25 c . the soa curve provides a single pulse rating.
3 typical electrical and thermal characteristics ao4440 typical electrical and thermal characteristics: n-c hannel 0 5 10 15 20 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3.5v 4.0v 10.0v 5.0v 4.5v 0 5 10 15 2 2.5 3 3.5 4 4.5 5 v gs (volts) figure 2: transfer characteristics i d (a) 20 30 40 50 60 70 80 90 100 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ? ? ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v i d =4a i d =5a 40 60 80 100 120 140 160 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ? ? ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =5a 25c 125c alpha & omega semiconductor, ltd. 4 - single n-channel mosfet ELM14440AA-N
4 ao4440 typical electrical and thermal characteristics: n-c hannel 0 2 4 6 8 10 0 2 4 6 8 10 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 0 10 20 30 40 50 60 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc t j(max) =150c t a =25c r ds(on) limited v ds =30v i d = 5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s alpha & omega semiconductor, ltd. single n-channel mosfet ELM14440AA-N 4 -
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